| PL |
G |
200 |
HF |
K |
120 |
C2 |
| PL=浦峦 |
G=IGBT |
Nominal Current |
Circuit configuration |
Die Characteristics |
Voltage/10 e.g.065=650V |
Package Type |
| |
|
IC(@Tc=80°C) |
SG=Single |
S=Standard IGBT Low Loss |
Voltage/10 e.g.120=1200V |
V1=45mm*56mm*17 DBC Base |
| |
|
as e.g.200=200A |
CU:Chopper Diode Up Side |
T=Trench FS IGBT Low Loss |
|
W1=34mm*48mm*15.5mm DBC Base |
| |
|
|
CL:Chopper Diode Low Side |
K=NPT IGBT Low Loss |
|
W2=48mm*57mm*15.5mm DBC Base |
| |
|
|
HF:Half Bridge |
U=NPT Ultra Fast IGBT |
|
L1=107mm*45mm*17mm Cu Base |
| |
|
|
HT:Tri-Pack |
F=Advanced Trench FS Ultra Fast IGBT |
|
L2=107mm*45mm*17mm Cu Base |
| |
|
|
HH:H Bridge |
C=SiC |
|
G1=122mm*62mm*17mm Cu Base |
| |
|
|
HC:Internal Connected H Bridge |
|
|
G2=122mm*62mm*17mm Cu Base |
| |
|
|
ML:3 Level,Diode Clampling,NPC1 |
|
|
G3=122mm*62mm*17mm Cu Base |
| |
|
|
MP: Upper Half of NPC1 3 Level |
|
|
G4=122mm*62mm*17mm Cu Base |
| |
|
|
MN: Lower Half of NPC1 3 Level |
|
|
C1=94mm*34mm*30mm Cu Base |
| |
|
|
TL:3 Level,IGBT Active Clampling,NPC2 |
|
|
C2=106mm*62mm*30mm Cu Base |
| |
|
|
TU:NPC1 Boost |
|
|
C3=122mm*62mm*17mm Cu Base |
| |
|
|
FF:3 Phase Bridge |
|
|
C4=108mm*62mm*30mm Cu Base |
| |
|
|
FS:3 Phase Open Emitter Output |
|
|
C5=122mm*62mm*30mm Cu Base |
| |
|
|
PI:3 Phase Rectifier + Brake + 3 Phase Output |
|
|
S1=31.7*26.3*1.8mm Cu Base |
| |
|
|
PJ:3 Phase Rectifier + Brake + 3 Phase Open Emitter Output |
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|
|
| |
|
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PF:3 Phase Rectifier + H Bridge Output |
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|
|
